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Profile
| Academic position | Full Professor |
|---|---|
| Research fields | Semiconductor Physics,Physical Chemistry of Molecules, Liquids and Interfaces, Biophysical Chemistry |
| Keywords | Defekte, Dotierung, GaN, Grenzflächen, Nitrid-Halbleiter |
| Honours and awards | 2025: Aneesur Rahman Prize for Computational Physics, American Physical Society 2023: Materials Theory Award, Materials Research Society 2022: Vannevar Bush Faculty Fellow 2016: Member, United States National Academy of Engineering 2015: John Bardeen Award, TMS 2013: Medard W. Welch Award, AVS 2011: Fellow of the American Association for the Advancement of Science (2011) 2011: Fellow of the Institute of Electrical and Electronics Engineers 2010: Fellow of the Materials Research Society 2009: AVS Fellow 2002: David Adler Award, American Physical Society 1998: Humboldt Research Award for Senior US Scientist, Alexander von Humboldt Foundation, Germany, 1998 1997: Fellow of the American Physical Society |
Current contact address
| Country | United States of America |
|---|---|
| City | Santa Barbara |
| Institution | University of California, Santa Barbara |
| Institute | Materials Department |
| Homepage | www.mrl.ucsb.edu/~vandewalle |
Host during sponsorship
| Prof. Dr. Matthias Scheffler | Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin |
|---|---|
| Prof. Dr. Klaus H. Ploog | Paul-Drude-Institut für Festkörperelektronik (PDI), Berlin |
| Prof. Dr. Matthias Scheffler | Abteilung Theorie, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin |
| Prof. Dr. Jörg Neugebauer | Abteilung Computergestütztes Materialdesign, Max-Planck-Institut für Nachhaltige Materialien, Düsseldorf |
| Start of initial sponsorship | 01/05/1999 |
Programme(s)
| 1998 | Humboldt Research Award Programme |
|---|
Publications (partial selection)
| 2004 | Chris G. Van de Walle and J. Neugebauer: First-principles calculations for defects and impurities: Applications to III-nitrides (Applied Physics Review). In: J. Appl. Phys., 2004, 3851-3879 |
|---|---|
| 2003 | S. Limpijumnong, J. E. Northrup, and Chris G. Van de Walle: Identification of hydrogen configurations in p-type GaN through first-principles calculations of vibrational frequencies. In: Phys. Rev. B, 2003, 075206 |
| 2003 | Chris G. Van de Walle and J. Neugebauer: Structure and energetics of nitride surfaces under MOCVD growth conditions. In: J. Cryst. Growth, 2003, 8-13 |
| 2002 | Chris G. Van de Walle and J. Neugebauer: First-principles surface phase diagram for hydrogen on GaN surfaces. In: Phys. Rev. Lett., 2002, 066103 |
| 2002 | Chris G. Van de Walle and J. Neugebauer: Role of hydrogen in surface reconstructions and growth of GaN. In: J. Vac. Sci. Technol. B, 2002, 1640-1646 |
| 2002 | Chris G. Van de Walle: Strategies for controlling the conductivity of wide-band-gap semiconductors. In: phys. stat. sol. (b), 2002, 221-228 |
| 2001 | Chris G. Van de Walle: Defect analysis and engineering in ZnO. In: Physica B, 2001, 899-903 |
| 2001 | Chris G. Van de Walle, S. Limpijumnong, and J. Neugebauer,: First-principles studies of beryllium doping of GaN. In: Phys. Rev. B, 2001, 245205 |
| 2001 | Chris G. Van de Walle: Point Defects and Impurities in III-Nitride Bulk and Thin Film Heterostructures. Encyclopedia of Materials: Science and Technology, Vol. 7. Pergamon, 2001. 7124 |
| 2000 | Chris G. Van de Walle and J. Neugebauer: Arsenic impurities in GaN. In: Appl. Phys. Lett. , 2000, 1009-1011 |
| 2000 | Chris G. Van de Walle: Hydrogen as a cause of doping in ZnO. In: Phys. Rev. Lett. , 2000, 1012-1015 |
| 1999 | Chris G. Van de Walle, J. Neugebauer, C. Stampfl, M. D. McCluskey, and N. M. Johnson: Defects and defect reactions in semiconductor nitrides. In: Acta Physica Polonica A, 1999, 613-627 |